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An N-type monocrystalline silicon wafer with low oxygen and carbon content, long minority-carrier lifetime and high dimensional consistency.
CZ-grown, phosphorus-doped wafers provide low defect levels and a low breakage rate for reliable high-efficiency cell production.
Technical specifications: N-type monocrystalline silicon, phosphorus-doped and grown by the Czochralski process. Edge and diameter tolerance: ±0.25 mm. Perpendicularity tolerance: ±0.2°.
Reference price basis: 0.17 per wafer
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